Akram N . Al-Mashhadany; Noor S. Sadeq
Abstract
The study was carried out by the preparing of PbTe thin films and studying theeffect of annealing temperatures on electrical and optical properties.The PbTe thin films have been prepared ...
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The study was carried out by the preparing of PbTe thin films and studying theeffect of annealing temperatures on electrical and optical properties.The PbTe thin films have been prepared by thermal evaporation in a vacuum of(2*10-5) Torr with thickness 500nm at room temperature and annealed at differentannealing temperatures of (373,423,473)K for 30 min.The electrical measurements show that the PbTe thin films have two kinds ofactivation energy which increases with increasing annealing temperature.The Hall Effect measurements prove that thin films are n-type at room temperatureand convert to p-type by annealing temperature and it is found thatNH decreases with increasing annealing temperature but μH increases with increasingannealing temperature.The optical measurements show that the PbTe thin films have direct energy gapwhich show that energy gap increases with increasing annealing temperatures and itis found the transmittance increases with increasing annealing temperatures
